Control of magnetic property in dopant lattice

2015 Fiscal Year Final Research Report

• Project/Area Number: 25706003
• Research Category: Grant-in-Aid for Young Scientists (A)
• Allocation Type: Partial Multi-year Fund
• Research Field: Nanostructural physics
• Research Institution: Shizuoka University (2015); University of Toyama
• Principal Investigator: Hori Masahiro 静岡大学, 電子工学研究所, 講師 (50643269)
• Research Collaborator: ONO Yukinori 静岡大学, 電子工学研究所, 教授 (80374073)
• Project Period (FY): 2013-04-01 – 2016-03-31
• Keywords: 量子準位 / チャージポンピング法 / 電子スピン共鳴法 / EDMR / シリコン / MOSFET / 界面欠陥 / ドーパント原子

Outline of Final Research Achievements

In this research project, I have established two methods towards the ultimate control of electronic charges and spins based on silicon transistors. One is the time domain charge pumping, which is a method for detecting the current flow in a MOS transistor in time domain. The method enables us to analyze the dynamics of electronic charges in localized states (such as dopant atoms and interface defects) in detail. The other is the electrically detected magnetic resonance (EDMR), which is a method for detecting the spin resonance of electrons in localized states. Here, I successfully obtained the EDMR signals based on electron-hole recombination process at the defect states.

Free Research Field

半導体量子エレクトロニクス