Elucidation of dislocation generation mechanism from seed boundaries in mono-like Si crystals

2016 Fiscal Year Final Research Report

• Project/Area Number: 25706018
• Research Category: Grant-in-Aid for Young Scientists (A)
• Allocation Type: Partial Multi-year Fund
• Research Field: Crystal engineering
• Research Institution: Tohoku University
• Principal Investigator: Kutsukake Kentaro 東北大学, 金属材料研究所, 助教 (00463795)
• Co-Investigator(Renkei-kenkyūsha): YONENAGA Ichiro 東北大学, 金属材料研究所, 教授 (20134041) ; OHNO Yutaka 東北大学, 金属材料研究所, 准教授 (80243129) ; DEURA Momoko 東北大学, 金属材料研究所, 助教 (90609299)
• Research Collaborator: NINOMIYA Shunya ; SUGIOKA Shota
• Project Period (FY): 2013-04-01 – 2016-03-31
• Keywords: 結晶粒界 / 転位 / 結晶成長 / 結晶欠陥 / シリコン / 太陽電池 / モノライク / 擬似単結晶

Outline of Final Research Achievements

Mono-like method is a next-generation manufacture process for solar cells to grow quasi-single crystalline silicon in a crucible with low production cost. The purpose of this study is to reveal generation mechanism of dislocations from seed joints (grain boundaries) during crystal growth of mono-like silicon. We performed (1) growth and characterization of mono-like silicon crystals with various grain boundary structure, (2) quantitative characterization of dislocations and grain boundaries using PL imaging, and (3) stress analysis using finite element method. We found correlations between grain boundary structure and stress applied on dislocations and between the structure and dislocation generation.

Free Research Field

結晶工学