2016 Fiscal Year Final Research Report
Development of fundamental crystal growth technology of In-based nitride alloy semiconductors
| Project/Area Number |
25706020
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| Research Category |
Grant-in-Aid for Young Scientists (A)
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| Allocation Type | Partial Multi-year Fund |
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| Research Field |
Crystal engineering
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| Research Institution | Kogakuin University |
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Principal Investigator |
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| Project Period (FY) |
2013-04-01 – 2017-03-31
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| Keywords | 結晶成長 / 窒化物半導体 / InGaN / 分子線エピタキシー（MBE） / エピタキシャル成長 / 電子・電気材料 / 半導体物性 |
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| Outline of Final Research Achievements |
This research was focused on high-In composition In-based nitride semiconductors, and the development of fundamental crystal growth technologies, including the fabrication of high-quality crystal and the control of surface band structure, of these materials was carried out.
The pn-InGaN LED was fabricated utilizing growth technologies we obtained. Based on the problems of the characteristics of this LED, the growth mechanism of InGaN was further understood by introducing a novel monitoring technology during growth. The development of the fabrication technology of the buffer layer for the growth of InGaN, which is universal for entire alloy composition, was challengingly carried out. The comprehensive studies including physical properties for the InGaN films with entire alloy compositions we obtained were also carried out.
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| Free Research Field |
結晶成長
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