2016 Fiscal Year Final Research Report
Clarification of growth mechanism of high-quality iron-based superconductor films and construction of growth technique of films exhibiting high performance
Project/Area Number |
25709058
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Research Category |
Grant-in-Aid for Young Scientists (A)
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Allocation Type | Partial Multi-year Fund |
Research Field |
Inorganic materials/Physical properties
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Research Institution | Tokyo Institute of Technology |
Principal Investigator |
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Project Period (FY) |
2013-04-01 – 2017-03-31
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Keywords | パルスレーザー堆積法 / エピタキシャル成長 / 超伝導 / 磁束ピニング / 臨界電流 |
Outline of Final Research Achievements |
Using pulsed laser deposition (PLD) employing 4 types of pulsed lasers, we explored the growth condition to obtain high quality BaFe2As2:Co thin films, and found that the optimum growth rate is constant to be 0.3nm/sec even if we employ different pulsed lasers for PLD. Further, we applied this optimized process to growth of BaFe2As2:P that we can expect higher critical temperature (~30 K) than that of BaFe2As2:Co (~20 K). Consequently, we succeeded in achieving high-performance critical current density of 7 MA/cm2, which is almost the same as the level of the final target (10 MA/cm2) for this research. Additionally, we fabricated the films on practically applied metal-tape substrates and achieved high performance practical level Jc of 0.1 MA/cm2 at 15 T.
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Free Research Field |
無機材料・物性
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