Single-step fabrication of untra narrow through silicon via for 3-dimensional integration of electronic devices

2015 Fiscal Year Final Research Report

• Project/Area Number: 25709075
• Research Category: Grant-in-Aid for Young Scientists (A)
• Allocation Type: Partial Multi-year Fund
• Research Field: Reaction engineering/Process system
• Research Institution: The University of Tokyo
• Principal Investigator: Momose Takeshi 東京大学, 工学(系)研究科(研究院), 講師 (10611163)
• Project Period (FY): 2013-04-01 – 2016-03-31
• Keywords: 超臨界流体 / 製膜 / 3次元実装 / Cu

Outline of Final Research Achievements

To fabricate through silicon via (TSV) into ultra narrow and high-aspect-ratio features, supercritical fluid deposition (SCFD), which utilizes chemical reactions in supercritical fluid, was studied. Deposition of metal films on insulative surface and improvement of filling capability are the issues, and were solved by development of composition-modulated CuMnOx buffer layer that was enabled by newly developed continuous reactor and optimization of the deposition conditions to maximize filling capability based on the solubility of source precursors in supercritical fluid. We eventually succeeded to fill Cu into silicon trench structure with aspect ratio exceeding 100.

Free Research Field

プロセス工学