2015 Fiscal Year Final Research Report
Development of Si thermoelectric devices by nanostructuring
| Project/Area Number |
25709090
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| Research Category |
Grant-in-Aid for Young Scientists (A)
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| Allocation Type | Partial Multi-year Fund |
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| Research Field |
Energy engineering
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| Research Institution | The University of Tokyo |
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Principal Investigator |
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| Project Period (FY) |
2013-04-01 – 2016-03-31
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| Keywords | phonon engineering / phononics / phononic crystal / thermoelectrics |
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| Outline of Final Research Achievements |
This research aimed to control thermal conduction using phononic crystal nanostructures and apply to thermoelectric devices. We used square-lattice phononic crystal with circular holes in Si thin films and compared thermal conductivity with those of nanowires and membranes. We demonstrated that efficient thermal conduction control can be possible by taking account of the multiple scale thermal phonon mean path. By using this technology, we demonstrated three fold enhancement of thermoelectric performance of poly-crystalline Si thin film. We also demonstrated the first thermal conductivity tuning by changing the crystal order in a phononic crystal. This is a mile-stone work in this field by expanding thermal conduction control technology from particle to wave regimes.
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| Free Research Field |
フォノニクス
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