2015 Fiscal Year Final Research Report
Conduction mechanism for nitrogen-doped graphene by low-temperature synthesis
| Project/Area Number |
25790025
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Nanomaterials engineering
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| Research Institution | National Institute of Advanced Industrial Science and Technology |
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Principal Investigator |
OKIGAWA Yuki 国立研究開発法人産業技術総合研究所, ナノ材料研究部門, 研究員 (50635315)
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| Project Period (FY) |
2013-04-01 – 2016-03-31
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| Keywords | グラフェン / 窒素 / ドーピング / プラズマ |
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| Outline of Final Research Achievements |
Plasma chemical vapor deposition (CVD) is advantageous for low-temperature, high-throughput, and large-area synthesis for carbon materials. We have synthesized nitrogen-doped graphene films by plasma CVD to clarify the electrical properties for that graphene films. The actual partial pressures of methane and nitrogen gases during graphene synthesis were measured directly by mass spectrometry. Controlling small amounts of flow rates for methane and nitrogen gases by this technique, nitrogen-doped graphene films were synthesized.
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| Free Research Field |
ナノカーボン材料におけるエレクトロニクス応用
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