Control of the electronic phase of transition-metal oxides exhibiting a first-order phase transition

2015 Fiscal Year Final Research Report

• Project/Area Number: 25790051
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Multi-year Fund
• Research Field: Crystal engineering
• Research Institution: National Institute of Advanced Industrial Science and Technology
• Principal Investigator: Shibuya Keisuke 国立研究開発法人産業技術総合研究所, 電子光技術研究部門, 研究員 (00564949)
• Project Period (FY): 2013-04-01 – 2016-03-31
• Keywords: 二酸化バナジウム / 金属－絶縁体転移 / 電子相転移

Outline of Final Research Achievements

Thin films and field-effect device structures of transition-metal oxides which show a first-order phase transition were fabricated with an aim of application utilizing strongly correlated electron materials. The electronic phase of vanadium dioxide was controlled in a nonvolatile by an electric field, which indicates a possibility of nonvolatile device application by controlling the electronic phase. Thin films of vanadium dioxide were fabricated on silicon substrates by controlling substrate temperature and oxygen pressure precisely during the deposition. The films exhibited a huge change in their optical properties.

Free Research Field

材料物理