Synthesis and characterization of half-metallic antiferromagnetic materials by atomic-layer control

2014 Fiscal Year Final Research Report

• Project/Area Number: 25790054
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Multi-year Fund
• Research Field: Thin film/Surface and interfacial physical properties
• Research Institution: The University of Tokyo
• Principal Investigator: CHIKAMATSU Akira 東京大学, 理学(系)研究科(研究院), 助教 (40528048)
• Project Period (FY): 2013-04-01 – 2015-03-31
• Keywords: 薄膜・表面界面物性 / 酸化物エレクトロニクス / 薄膜新材料

Outline of Final Research Achievements

Half-metallic antiferromagnet (HMAF) compounds have been theoretically predicted in many structural systems by first-principles calculations, but none of them could be experimentally synthesized thus far. In this study, epitaxial thin films of LaSrVMoO6 and Cr-doped SrRuO3, which are predicted to be possible HMAF candidates, were fabricated by pulsed-laser deposition method, and investigated their physical properties and electronic states. It was found that the resistivity of the fabricated LaSrVMoO6 thin films was lower than that of the polycrystalline samples. In particular, the resistivity at 5 K of the LaSrVMoO6 thin films showed 2×10-4 Ω cm, being due to the improvement in the crystallinity and the ordering of V and Mo ions. It was also found that in the SrRu0.9Cr0.1O3 films, the Cr 3dt2g orbital is strongly hybridized with the Ru 4dt2g one. Furthermore, the perfect B-site ordered Sr2MgMoO6 epitaxial thin films, which can be used as a seed layer, were successfully fabricated.

Free Research Field

固体化学