Single Event Burnout Mechanisms in SiC devices

2015 Fiscal Year Final Research Report

• Project/Area Number: 25790076
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Multi-year Fund
• Research Field: General applied physics
• Research Institution: Japan Atomic Energy Agency
• Principal Investigator: Makino Takahiro 国立研究開発法人日本原子力研究開発機構, 原子力科学研究部門 量子ビーム応用研究センター, 研究員 (80549668)
• Project Period (FY): 2013-04-01 – 2016-03-31
• Keywords: 炭化ケイ素 / SiC / 耐放射線性 / シングルイベント

Outline of Final Research Achievements

The charge enhancement in SiC-Schottky Barrier Didoes (SBDs) with different epi-layer thicknesses under the condition of the single-species ion irradiation was simulated to find out the mechanism of heavy-ion-induced anomalous charge collection in SiC-SBDs. The value of ion induced charge depended on the thickness of epitaxial-layer in the SBDs. The simulation result suggests that the impact ionization is one of the key effects to lead ion induced charge enhancement.

Free Research Field

放射線工学