Electronic and magnetic property tuning of ZrCuSiAs-type compounds via hydrogen-substituion

2016 Fiscal Year Final Research Report

• Project/Area Number: 25810035
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Multi-year Fund
• Research Field: Inorganic chemistry
• Research Institution: Tokyo Institute of Technology
• Principal Investigator: Matsuishi Satoru 東京工業大学, 元素戦略研究センター, 准教授 (30452006)
• Project Period (FY): 2013-04-01 – 2017-03-31
• Keywords: 水素アニオン / 層状化合物 / 電子ドーピング / 金属・絶縁体転移 / 混合アニオン化合物

Outline of Final Research Achievements

The effect of electron doping on ZrCuSiAs-type LaZnAsO via hydride ion substitution to oxygen site was investigated. The substitution limit of hydrogen was determined to be < 25% and the insulator to metal transition was observed at the nominal hydrogen content between 20% to 25%. By applying the hydrogen-manganese co-substitution to LaZnAsO, the weak ferromagnetism was observed. The detailed magnetic measurement, the photoelectron emission spectroscopy and the density functional theory calculation for LaMnAsO1-xHx system indicated that the antiferromagnetic insulator to ferromagnetic metal transition via hydrogen-substitution is induced by direct interaction among Mn 3d electrons forming conduction band.

Free Research Field

無機材料・物性