Evaluation for distribution of interface strength induced by grain structure

2014 Fiscal Year Final Research Report

• Project/Area Number: 25820007
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Multi-year Fund
• Research Field: Materials/Mechanics of materials
• Research Institution: Nagoya Institute of Technology
• Principal Investigator: SHISHIDO Nobuyuki 名古屋工業大学, 工学(系)研究科(研究院), 研究員 (00570235)
• Project Period (FY): 2013-04-01 – 2015-03-31
• Keywords: 界面強度 / 微視組織 / 塑性変形

Outline of Final Research Achievements

Copper interconnect systems of semiconductor devices has a risk of mechanical fracture along with the trend of further integration and miniaturization, because of many weak interfaces stacked to compose multilayered copper/dielectric systems. In order to improve mechanical reliability of the semiconductor products, those interface strengths were evaluated. In the case of polycrystalline copper structure, the evaluated strength of copper/SiN interface distributed with larger scatter than single crystalline copper structure. This result suggests that the microstructure of copper plays an important role on local interface strength. In addition, in-situ crystal orientation observation during the fracture test was performed. The obtained result demonstrated that the interface fracture accompanied the local plastic deformation of copper near the Cu/SiN interface depending on the microstructure.

Free Research Field

材料力学