2014 Fiscal Year Final Research Report
Fabrication of high-quality substrates for nitride-semiconductor-based solar cells
| Project/Area Number |
25820120
|
|---|
| Research Category |
Grant-in-Aid for Young Scientists (B)
|
| Allocation Type | Multi-year Fund |
|---|
| Research Field |
Electronic materials/Electric materials
|
|---|
| Research Institution | The University of Tokyo |
|---|
Principal Investigator |
|
|---|
| Project Period (FY) |
2013-04-01 – 2015-03-31
|
| Keywords | 窒化物半導体 / 薄膜成長 |
|---|
| Outline of Final Research Achievements |
We have fabricated novel substrates for high-performance nitride semiconductor solar cells. The substrates were fabricated via peeling off the high-quality nitride films epitaxially grown on lattice-matched oxide substrates. This process has enabled the fabrication of nitride semiconductor templates with arbitrary lattice constants and band-gaps.
|
| Free Research Field |
窒化物半導体結晶成長
|
