Defect analysis in p- Diamond Layer of Diamond Power Device

2015 Fiscal Year Final Research Report

• Project/Area Number: 25820128
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Multi-year Fund
• Research Field: Electronic materials/Electric materials
• Research Institution: National Institute of Advanced Industrial Science and Technology
• Principal Investigator: Kato Yukako 国立研究開発法人産業技術総合研究所, 先進パワーエレクトロニクス研究センター, 主任研究員 (90509837)
• Project Period (FY): 2013-04-01 – 2016-03-31
• Keywords: ダイヤモンド / パワーデバイス / 転位

Outline of Final Research Achievements

For development of high-performance diamond power device, I study about the dislocations in semiconducting diamond layer of Schottky barrier diode by using x-ray topography. Focused device performance is breakdown voltage characteristics. For the estimate the distribution of dislocations in the area of the each Schottky electrode, dislocations in semiconducting diamond layer were estimated by using X-ray topography. From experimental data, any killer dislocation was not found. However, if dislocations work as several type of resistors of power device, it is assumed that edge dislocation and unknown defect disturb the device performance.

Free Research Field

結晶評価