A fundamental study for a scaled NAND flash memory system resistive to errors induced by single-electron phenomenon

2015 Fiscal Year Final Research Report

• Project/Area Number: 25820148
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Multi-year Fund
• Research Field: Electron device/Electronic equipment
• Research Institution: Shinshu University
• Principal Investigator: MIYAJI Kousuke 信州大学, 学術研究院工学系, 准教授 (80635467)
• Project Period (FY): 2013-04-01 – 2016-03-31
• Keywords: NANDフラッシュメモリ / ランダムテレグラフノイズ / デバイスシミュレーション / 離散不純物ばらつき

Outline of Final Research Achievements

The origin of a statistical distribution of random telegraph noise (RTN, noise induced by single-electron behavior) amplitude in scaled NAND flash memory technology is investigated through 3D device simulation for error-resistive NAND flash memory system. Although random dopant fluctuation was believed to be the major physical origin as reported in the previous works, it is newly found that many other physical origins, such as the number of traps and the amount of charge in the floating gate of the NAND flash memory cell, are important factors to understand RTN amplitude distribution.

Free Research Field

半導体集積メモリデバイス