Fabrication of thin film flexible transistor using gallium oxide

2015 Fiscal Year Final Research Report

• Project/Area Number: 25820149
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Multi-year Fund
• Research Field: Electron device/Electronic equipment
• Research Institution: National Institute of Technology, Kumamoto College
• Principal Investigator: Takakura Kenichiro 熊本高等専門学校, 情報通信エレクトロニクス工学科, 准教授 (70353349)
• Project Period (FY): 2013-04-01 – 2016-03-31
• Keywords: 酸化物半導体 / フレキシブルデバイス

Outline of Final Research Achievements

b-Ga2O3 growth condition is studied using analysis of element compositions and crystalline qualities to the purpose of device fabrication of gallium oxide. From the X-ray diffraction analysis, crystalline orientation of the gallium oxide film which is thicker than a thin film is good. Optical transparent wavelength range of the gallium oxide compared with the other transparent conductive oxide materials (TIO, ZnO). It could be able to confirm that the transparent wavelength range of gallium oxide was much wider than other materials. In addition to that, long time thermal treatment up to 40 hours at 900oC is effective to increase electrical conductance.

Free Research Field

電子工学