2014 Fiscal Year Research-status Report
その場TEM測定による10nm世代Siトランジスタの移動度に及ぼす歪み効果の解明
| Project/Area Number |
25820336
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| Research Institution | National Institute for Materials Science |
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Principal Investigator |
湯 代明 独立行政法人物質・材料研究機構, その他部局等, 研究員 (50646271)
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| Project Period (FY) |
2013-04-01 – 2016-03-31
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| Keywords | in situ / silicon nanowire / strain engineering / electron microscopy |
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| Outline of Annual Research Achievements |
The purpose of the current research is to directly measure the intrinsic transport properties of Si nanowire transistors, and the strain effects on the mobility by in situ TEM method. Because of the large elastic limit due to a size effects, elastic strain as high as 5 % could be applied to the Si nanowires, and may lead to great enhancement of the performance of the 10 nm scale transistors.
In the fiscal year 2014, the following achievements have been achieved: (1) construction of 10 nm Si nanowire transistor inside a TEM; (2) direct measurements of the transport properties by three-terminal approach; (3) direct investigation of the strain effects on the electrical properties of the Si nanowires.
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| Current Status of Research Progress |
Current Status of Research Progress
2: Research has progressed on the whole more than it was originally planned.
Reason
The research plan for year 2014 is to investigate on the strain effects on the mobility.
Nanowire transistors have been fabricated inside the TEM. In addition, the transport properties of the Si nanowires have been successfully tested. And the change of the mobility due to the elastic strain has been evaluated.
During the research, it was found that the surface and contact quality is critical for reliable electrical measurements. Therefore, the surface was treated by HF to remove the naturally grown SiO2 layer. And the contact was improved by various techniques, including (1) fixing the sample by conductive epoxy; (2) electron beam induced welding; (3) discharge induced tip melting.
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| Strategy for Future Research Activity |
In the fiscal year 2015, systematic measurement over the strain effect on the electron and hole motility will be carried out. In addition, the philosophy of strain engineering will be applied to other low dimensional systems. And the research results will be summarized and published in international journals.
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| Causes of Carryover |
Last year, I developed an evaluation method for investigating the strain effects on the transport properties, such as the resistivity, doping concentration, and importantly, the charge mobility. Specifically, I tested the voltage-current (I-V) dependence during the deformation (elongation and bending) process. By fitting the I-V curves, the transport properties parameters could be extracted. In next step, I will apply the evaluation method to Si nanowires with different doping types, so that the dependence of mobility of electron or holes could be investigated directly. Because the work is not complete, I saved some budget for next fiscal year to finish the work as stated above.
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| Expenditure Plan for Carryover Budget |
Budget will be used for the fabrication of nanowires with desired doping and for the consumables for the in situ electron microscopy measurements.
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[Journal Article] Atomistic Origins of High Rate Capability and Capacity of N-Doped Graphene for Lithium Storage2014
Author(s)
Xi Wang, Qunhong Weng, Xizheng Liu, Xuebin Wang, Dai-Ming Tang, Wei Tian, Chao Zhang, Wei Yi, Dequan Liu, Yoshio Bando, Dmitri Golberg
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Journal Title
Nano Letters
Volume: 14
Pages: 1164-1171
DOI
Peer Reviewed
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[Presentation] In Situ TEM: An Nanolab for Growth, Manipulation, and Properties of Nanostructures2014
Author(s)
Dai-Ming Tang, Chang Liu, Peng-Xiang Hou, Li-Chang Yin, Cui-Lan Ren, Feng Li, Naoyuki Kawamoto, Masanori Mitome, Naoki Fukata, Yoshio Bando, Hui-Ming Cheng, Dmitri Golberg
Organizer
The 15th IUMRS-International Conference in Asia (IUMRS-ICA 2014)
Place of Presentation
Fukuoka, Japan
Year and Date
2014-08-24 – 2014-08-30
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