Investigations of the strain effects on the mobility of 10-nm Si transistors by in situ TEM

2015 Fiscal Year Final Research Report

• Project/Area Number: 25820336
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Multi-year Fund
• Research Field: Inorganic materials/Physical properties
• Research Institution: National Institute for Materials Science
• Principal Investigator: Tang Dai-Ming 国立研究開発法人物質・材料研究機構, 国際ナノアーキテクトニクス研究拠点, 研究員 (50646271)
• Project Period (FY): 2013-04-01 – 2016-03-31
• Keywords: electron microscopy / nanowire transitors / mechanical properties / electrical properties

Outline of Final Research Achievements

Electrical devices of one-dimensional nanostructures have been fabricated, and their mechanical and electrical properties have been investigated by using the in situ TEM method. The electron mobility of silicon nanowires could be enhanced 3.8 times under a tensile strain 3.4 %, and could be linearly and reversibly increased 2.7 times under a bending strain up to 14.7 %. In addition, transistors and vacuum tubes of single walled carbon nanotubes with the diameter ~1 nm have been successfully fabricated, with the chirality dependent transport properties demonstrated. Furthermore, deformation of atomically thin two-dimensional crystals has been studied, revealing the ultimately high flexibility, paving the way for the high performance flexible electronic devices.

Free Research Field

Nanomaterials