2014 Fiscal Year Final Research Report
Improvement of piezoelectric property of PZT thin films for MEMS by wakeup
Project/Area Number |
25820339
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Research Category |
Grant-in-Aid for Young Scientists (B)
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Allocation Type | Multi-year Fund |
Research Field |
Inorganic materials/Physical properties
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Research Institution | National Institute of Advanced Industrial Science and Technology |
Principal Investigator |
KOBAYASHI Takeshi 独立行政法人産業技術総合研究所, 集積マイクロシステム研究センター, 主任研究員 (20415681)
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Research Collaborator |
FUNAKUBO Hiroshi 東京工業大学, 総合理工学研究科, 教授
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Project Period (FY) |
2013-04-01 – 2015-03-31
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Keywords | 圧電 / 薄膜 / ポーリング / PZT / MEMS |
Outline of Final Research Achievements |
We have investigated the influence of pulse poling on the piezoelectric property of Pb(Zr0.52,Ti0.48)O3 (PZT) thin films. 1.9-μm-thick PZT thin films were deposited by sol-gel method and fabricated into microelectromechanical systems (MEMS) based piezoelectric microcantilevers. 1 kHz of unipolar or bipolar triangle pulse wave between 30-100 V was applied to the PZT thin films. The effective piezoelectric constant d31, under small signal actuation at 1-3 Vpp, was estimated from the tip displacement of the piezoelectric microcantilevers. The highest piezoelectric constant |d31| as high as 105 pm/V has been obtained by downward unipolar pulse poling at 100 V.
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Free Research Field |
無機材料・物性
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