2014 Fiscal Year Research-status Report
Electrodeposition of copper on silicon studied with in-situ X-ray scattering
| Project/Area Number |
25820373
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| Research Institution | Tokyo Gakugei University |
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Principal Investigator |
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| Project Period (FY) |
2013-04-01 – 2016-03-31
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| Keywords | Electrodeposition / X-ray reflectivity / Silicon / Copper / 表面・界面物性 |
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| Outline of Annual Research Achievements |
In fiscal year 2014, research was focused on the investigation of the electrochemical growth of copper thin films on silicon under different growth conditions and the anodic oxidation of silicon under different potentials. For both samples, the evolution of the thin film during growth was observed in-situ using the simultaneous multiple angle-wavelength X-ray reflectometer at beamline NE7A of the Photon Factory Advanced Ring. For both samples, changes in the X-ray reflectivity during growth could be observed.
In the case of the copper deposition, films were found to be rough under all investigated growth conditions. The incident X-rays significantly affect the growth, reducing the growth rate. Growth was therefore only possible at comparatively high overpotentials. This problem has to be investigated further.
The growth of silicon oxide thin films during the anodic oxidation of silicon was investigated as well. In this case, the incident X-rays also affected the growth at higher intensities, but only little at lower intensities. Flat films showing clear interference fringes in the X-ray reflectivity could be observed. The X-ray reflectivity was analyzed to show the evolution of the film and interface thickness, roughness and density.
The new electrochemical cell built in fiscal year 2013 was tested and proved to allow more uniform growth and an easier handling.
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| Current Status of Research Progress |
Current Status of Research Progress
4: Progress in research has been delayed.
Reason
The in-situ investigation of the growth of copper thin films with X-ray reflectivity was conducted, but growth of flat thin films was more difficult than expected. The research was delayed, because the reduction of the operating time of the PF-AR ring led to a reduction of the beamtime available for this research.
The investigation of the anodic growth of silicon oxide on silicon, on the other hand, gave good results.
The design and fabrication of the variable-temperature electrochemical cell planned for fiscal year 2014 was delayed, because the principal investigator moved to a different institution in fiscal year 2013 and facilities for conducting experiments had to be secured first.
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| Strategy for Future Research Activity |
In fiscal year 2015, the electrochemical cell for variable-temperature measurements will be fabricated and used for investigating the growth at different temperatures.
In addition, experiments at room temperature will be continued for both the growth of copper films and silicon oxide films on silicon. In both cases, care will be taken to avoid suppression of the growth by the incident X-rays. In the case of the former, it will be investigated, whether the influence of additives on the growth can be studied. In the case of the latter, it will be attempted to observe the diffraction peaks due to possible crystalline interface layers.
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| Causes of Carryover |
The fabrication of the temperature-variable electrochemical sample cell planned for the fiscal year 2014 was delayed. The amount allocated for this sample cell was therefore unused.
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| Expenditure Plan for Carryover Budget |
The amount will be used in fiscal year 2015 for the fabrication of the temperature-variable electrochemical sample cell. In addition, it will be used for consumables and travel costs related to the research.
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