2015 Fiscal Year Annual Research Report
Electrodeposition of copper on silicon studied with in-situ X-ray scattering
| Project/Area Number |
25820373
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| Research Institution | Tokyo Gakugei University |
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Principal Investigator |
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| Project Period (FY) |
2013-04-01 – 2016-03-31
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| Keywords | Electrodeposition / X-ray reflectivity / Silicon / 表面・界面物性 |
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| Outline of Annual Research Achievements |
In fiscal year 2015, different samples of interest in electrochemistry were investigated with time-resolved in-situ X-ray scattering.
The first sample investigated was the electrodeposition of copper onto silicon. The evolution of the roughness of the deposited film during the growth could be followed.
Second, the growth of silicon oxide thin films by anodic oxidation of silicon was observed with X-ray reflectivity. This gave information about the growth process and relaxation processes.
Third, the evolution of the electric double layer between an electrode and an ionic liquid after changes in the applied electric potential was investigated by measuring the X-ray reflectivity. The results provided evidence for slow relaxations of the structure at the interface.
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Research Products
(3 results)
