Development of a spin-rotatable spin-polarized field emitter

2014 Fiscal Year Final Research Report

• Project/Area Number: 25870326
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Multi-year Fund
• Research Field: Thin film/Surface and interfacial physical properties; Nanostructural physics
• Research Institution: Mie University
• Principal Investigator: NAGAI Shigekazu 三重大学, 工学(系)研究科(研究院), 助教 (40577970)
• Project Period (FY): 2013-04-01 – 2015-03-31
• Keywords: 電界放出型電子源 / スピン偏極電子源 / 反強磁性体 / 層間反強磁性体

Outline of Final Research Achievements

For a development of a direction-controllable spin-polarized field emitter, a crystalline structure and spin-polarization of a C/W<001>emitter was investigated. An electrochemically etched a single-crystalline W<001> tip was cleaned in ultrahigh vacuum by field evaporation process. Cr was in-situ deposited with electron bombardment evaporation at room temperature. Subsequently, in order to improve the crystallinity of the Cr thin film, the tip was annealed 750K. The surface structure of the Cr/W(001) tip was observed by using field ion microscope with hydrogen as imaging gas. FIM image shows that Cr layers was grown pseudomorphically on W(001). Then we measure spin polarization from Cr/W(001) plane. The maximum of spin polarization of electrons field-emitted from the emitter was 20% at 150 K. Investigation that effects of the surface structure of the Cr thin film and adsorption of gas atoms on the spin polarization has been progressed.

Free Research Field

表面物理