Development of defect-controlled hetero-junction contact with amorphous silicon insertion

2014 Fiscal Year Final Research Report

• Project/Area Number: 25870466
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Multi-year Fund
• Research Field: Thin film/Surface and interfacial physical properties; Electronic materials/Electric materials
• Research Institution: Hiroshima University
• Principal Investigator: HANAFUSA HIROAKI 広島大学, 先端物質科学研究科, 助教 (70630763)
• Project Period (FY): 2013-04-01 – 2015-03-31
• Keywords: 炭化ケイ素 / オーミックコンタクト / シリコン挿入層

Outline of Final Research Achievements

Low-resistivity contact formation by band potential control with a high-impurity contained amorphous Si insertion layer was investigated for Silicon carbide (SiC) devices. Using a proposed method, effective contact property of 2x10-6Ωcm2 was achieved without annealing process of metal electrode. XPS measurement revealed that defect controlled a-Si insertion layer reduces potential energy offset. From these results, band offset alignment was controlled by proposed defect-controlled a-Si layer insertion. These results expected to increase SiC device reliability and properties.

Free Research Field

半導体工学