Growth and characterization of semiconductor nanowire structures formed by closely stacked self-assembled quantum dots

2014 Fiscal Year Final Research Report

• Project/Area Number: 25870885
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Multi-year Fund
• Research Field: Crystal engineering; Nanostructural physics
• Research Institution: Toyota Technological Institute
• Principal Investigator: OHMORI Masato 豊田工業大学, 工学(系)研究科(研究院), 研究員 (70454444)
• Project Period (FY): 2013-04-01 – 2015-03-31
• Keywords: ナノワイヤ / ナノ細線 / 量子ドット / コラムナ量子ドット / 分子線エピタキシー

Outline of Final Research Achievements

Transport properties and structural characteristics of a single semiconductor nanowire grown by molecular beam epitaxy were investigated. The nanowires were formed by depositing an AlGaAs/GaAs/InAs short-period superlattice onto self-assembled InAs quantum dots on GaAs. It is found that the nanowire current channels showed good ohmic conduction when the compositions of Al, In and Ga were about 19, 29 and 52%, respectively. In addition, the measurements of the conductance of nanowires as a function of temperature imply Luttinger-liquid behavior. These results suggest that our nanowire has potential applications in optoelectronics devices.

Free Research Field

半導体ナノ構造デバイス