Field effect control of electronic phase of strongly correlated electron oxide by using solid gate insulator

2016 Fiscal Year Final Research Report

• Project/Area Number: 25871196
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Multi-year Fund
• Research Field: Thin film/Surface and interfacial physical properties; Electronic materials/Electric materials
• Research Institution: National Institute of Advanced Industrial Science and Technology
• Principal Investigator: Asanuma Shutaro 国立研究開発法人産業技術総合研究所, ナノエレクトロニクス研究部門, 研究員 (30409635)
• Research Collaborator: SAWA Akihito ; INOUE Isao ; YAMADA Hiroyuki ; SATOH Hiroshi ; SIBUYA Keisuke ; SHIMA Hisashi
• Project Period (FY): 2013-04-01 – 2017-03-31
• Keywords: 強相関エレクトロニクス / 電子・電気材料 / 電子デバイス・機器 / 表面・界面物性 / 強相関電子系

Outline of Final Research Achievements

Recently, miniaturization of electronic devices using semiconductors is advancing. However, miniaturization of these devices is approaching their limits. Therefore, the development of the new device using the materials with an unprecedented characteristic is being studied to exceed those limits. One of them is a Mott transistor applying a phenomenon called metal insulator phase transition. In this research, we fabricated Mott transistors which are made of two kinds of oxides, NdNiO3 and SmCoO3, and compared their performance.

Free Research Field

酸化物エレクトロニクス