2014 Fiscal Year Final Research Report
Basic research of high-mobility transistor with layered MoS2 channel
| Project/Area Number |
25889022
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| Research Category |
Grant-in-Aid for Research Activity Start-up
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| Allocation Type | Single-year Grants |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | Tokyo Institute of Technology |
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Principal Investigator |
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| Project Period (FY) |
2013-08-30 – 2015-03-31
|
| Keywords | 電子デバイス・集積回路 / 遷移金属ダイカルコゲナイド / 二硫化モリブデン / スパッタ / 第一原理計算 |
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| Outline of Final Research Achievements |
A basic research of MoS2 film, which is an atomically-layered semiconductor instead of silicon, was carried out for high-performance and low-cost LSIs. In order to improve the mobility determining transistor performance, it was confirmed that the impurity concentration of MoS2 film is reduced as 1017 cm-3 by using a high-temperature sputtering method. Moreover, 1016 cm-3 and mobility of 26 cm2/V-s were achieved by using the flatting process for SiO2 underneath film.
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| Free Research Field |
工学、電子デバイス
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