Investigation of effect of domain structure to large piezoelectricity in ferroelectric-antiferroelectric phase boundary

2014 Fiscal Year Final Research Report

• Project/Area Number: 25889025
• Research Category: Grant-in-Aid for Research Activity Start-up
• Allocation Type: Single-year Grants
• Research Field: Inorganic materials/Physical properties
• Research Institution: Tokyo Institute of Technology
• Principal Investigator: YASUI Shintaro 東京工業大学, 応用セラミックス研究所, 助教 (40616687)
• Project Period (FY): 2013-08-30 – 2015-03-31
• Keywords: 相転移 / 強誘電体 / 圧電体 / ドメイン / コンビナトリアル / 薄膜

Outline of Final Research Achievements

We focused on what is the most effective thing of piezoelectric materials with superior piezoelectricity. Domain structure around ferroelectric -antiferroelectric phase boundary in (Bi,Sm)FeO3 library films was investigated for deeply understanding of origin of large piezoelectricity. Comparing with the case of common ferroelectric-ferroelectric phase boundary, one domain in ferroelectric-antiferroelectric materials around morphotropic phase boundary showed huge piezoelectricity, however driving force of domain switching, e.g. coercive field, was larger than that in ferroelectric-ferroelectric materials.

Free Research Field

無機材料・物性