Interface control of epitaxial silicene

2017 Fiscal Year Final Research Report

• Project/Area Number: 26246002
• Research Category: Grant-in-Aid for Scientific Research (A)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Nanostructural physics
• Research Institution: Japan Advanced Institute of Science and Technology
• Principal Investigator: Takamura Yukiko (山田由起子) 北陸先端科学技術大学院大学, 先端科学技術研究科, 准教授 (90344720)
• Co-Investigator(Renkei-kenkyūsha): FLEURENCE ANTOINE 北陸先端科学技術大学院大学, 先端科学技術研究科, 助教 (30628821) ; OZAKI TAISUKE 東京大学, 物性研究所, 教授 (70356723)
• Research Collaborator: LEE CHI-CHENG ; GIMBERT FLORIAN
• Project Period (FY): 2014-04-01 – 2018-03-31
• Keywords: ナノ材料 / 二次元材料 / シリセン / 薄膜 / 走査プローブ顕微鏡 / 放射光実験 / 角度分解光電子分光

Outline of Final Research Achievements

In order to form a free-standing-like epitaxial silicene, and to form a capping layer which keeps the properties of silicene but prevents oxidation of silicene, the interfaces formed between silicene and substrates, silicene and capping layers were studied using high-resolution photoelectron spectroscopy at synchrotron radiation facility. By depositing silicon on zirconium diboride thin film terminated by monolayer hexagonal boron nitride (h-BN), silicene was formed in between h-BN and diboride. Photoelectron spectroscopy revealed that this silicene sheet formed through intercalation has similar electronic properties to the spontaneously formed ones, and monolayer h-BN successfully prevents oxidation of silicene for at least an hour in air.

Free Research Field

材料科学