In-situ observation of threading dislocation conversion in high-quality SiC growth

2016 Fiscal Year Final Research Report

• Project/Area Number: 26246019
• Research Category: Grant-in-Aid for Scientific Research (A)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Crystal engineering
• Research Institution: Nagoya University
• Principal Investigator: Ujihara Toru 名古屋大学, 未来材料・システム研究所, 教授 (60312641)
• Co-Investigator(Kenkyū-buntansha): 原田 俊太 名古屋大学, 未来材料・システム研究所, 助教 (30612460) ; 田渕 雅夫 名古屋大学, シンクロトロン光研究センター, 教授 (90222124)
• Project Period (FY): 2014-04-01 – 2017-03-31
• Keywords: 結晶成長 / 結晶欠陥

Outline of Final Research Achievements

Silicon carbide technology which can overcome the performance of silicon power devices is being developed in the world. However, many types of defect (threading dislocations, stacking faults, basal-plane dislocations) still remain in commercial SiC wafers. Thus, the reduction of them is a key to increase its reliability and performance. In this study, we developed new system for in-situ observation of growth surface and in-situ X-ray topography and evaluated the behaviors of defetcs in SiC at high temperatures.

Free Research Field

結晶工学