Control of site selective doping and carrier transport in core-shell heterojunction nanowires

2017 Fiscal Year Final Research Report

• Project/Area Number: 26246021
• Research Category: Grant-in-Aid for Scientific Research (A)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Crystal engineering
• Research Institution: National Institute for Materials Science
• Principal Investigator: Fukata Naoki 国立研究開発法人物質・材料研究機構, 国際ナノアーキテクトニクス研究拠点, 主任研究者 (90302207)
• Co-Investigator(Kenkyū-buntansha): 宮崎 剛 国立研究開発法人物質・材料研究機構, 国際ナノアーキテクトニクス研究拠点, MANA主任研究者 (50354147)
• Project Period (FY): 2014-04-01 – 2018-03-31
• Keywords: 結晶成長 / シリコン / ゲルマニウム / ナノワイヤ / ヘテロ接合 / 半導体 / ラマン分光 / 第一原理計算

Outline of Final Research Achievements

The purpose of this study is to realize next-generation high mobility transistor channels using Si/Ge and Ge/Si core-shell heterostructure nanowires. We performed large-scale first principle calculations on K-computer and clarified electronic states in Si/Ge and Ge/Si core-shell nanowires (NWs) composed of 3 million atoms. Based on the theoretical results, we made it possible to form Si/Ge and Ge/Si core-shell NWs with sharp interfaces. We could also establish site-selective doping in core-shell NWs, resulting in the formation of high mobility channel by separating the carrier transport region from the impurity-doped region.

Free Research Field

半導体物性工学