Investigating the electronic structures of LaAlO3/SrTiO3 heterostructures on an atomic scale

2017 Fiscal Year Final Research Report

• Project/Area Number: 26246022
• Research Category: Grant-in-Aid for Scientific Research (A)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Thin film/Surface and interfacial physical properties
• Research Institution: Tokyo Institute of Technology (2016-2017); Tohoku University (2014-2015)
• Principal Investigator: Hitosugi Taro 東京工業大学, 物質理工学院, 教授 (90372416)
• Co-Investigator(Renkei-kenkyūsha): Shimizu Ryota 東京工業大学, 物質理工学院, 助教 (70611953) ; Okada Yoshinori 沖縄科学技術大学院大学, 准教授 (00707656) ; Shiraki Susumu 日本工業大学, 教授 (80342799)
• Project Period (FY): 2014-04-01 – 2018-03-31
• Keywords: 酸化物表面 / 界面 / 走査プローブ顕微鏡 / 走査トンネル顕微鏡 / ペロブスカイト

Outline of Final Research Achievements

Transition-metal oxides exhibit various functional properties not found in ordinary semiconductors. In recent years, with the rapid development of oxide-thin film growth technique, it has become possible to fabricate high-quality thin films and heterostructures. The atomic level control of surfaces and interfaces reveals a variety of novel physical properties and functionalities.
To investigate the origins of such functional properties on an atomic scale, we developed a scanning tunneling microscope combined with a pulsed-laser deposition system, and studied the atomic and electronic structures of the surfaces of the transition-metal oxide films.

Free Research Field

固体化学