Tuning of electronic property and chemical reactivity of a two-dimensional silicon structure

2016 Fiscal Year Final Research Report

• Project/Area Number: 26248006
• Research Category: Grant-in-Aid for Scientific Research (A)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Physical chemistry
• Research Institution: Osaka University
• Principal Investigator: OKADA Michio 大阪大学, 理学研究科, 教授 (30281116)
• Co-Investigator(Kenkyū-buntansha): 蔡 徳七 大阪大学, 理学(系)研究科(研究院), 講師 (20273732) ; Dino Wilson 大阪大学, 工学(系)研究科(研究院), 准教授 (60379146)
• Co-Investigator(Renkei-kenkyūsha): TERAOKA Yuden 量子科学技術研究開発機構, 上席研究員 (10343922)
• Research Collaborator: TAKEYASU Kotaro ; TSUDA Yasutaka ; MAKINO Takamasa
• Project Period (FY): 2014-04-01 – 2017-03-31
• Keywords: 表面・界面 / 表面反応 / ２次元シリコン構造

Outline of Final Research Achievements

We carried out fundamental research aimed at facilitating the effective use of geochemically abundant elements that make up a large average percentage (clarkes) of the Earth's crust, e.g., silicon (25.8 clarke). We have succeeded to deposit silicon atoms on copper and silver single crystal surfaces, produced two-dimensional silicon structures, and elucidated the elementary processes in reactions with methyl chloride and other compounds. We thus aimed at being able to tune the Rochow reaction, an important process in the industrial synthesis of silicone. We were able to elucidate and determine the reactivity of copper, copper alloy, and silver surfaces used as actual substrates to grow silicon layers. Furthermore, we succeeded to produce two-dimensional structures and determined how the reactivity changes with the choice of substrate used to grow silicon layers.

Free Research Field

表面化学