Research for synthesis of BCN crystals and their characterizations

2016 Fiscal Year Final Research Report

• Project/Area Number: 26248061
• Research Category: Grant-in-Aid for Scientific Research (A)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Inorganic industrial materials
• Research Institution: National Institute for Materials Science
• Principal Investigator: Taniguchi Takashi 国立研究開発法人物質・材料研究機構, 機能性材料研究拠点, グループリーダー (80354413)
• Co-Investigator(Kenkyū-buntansha): 町田 友樹 東京大学, 生産技術研究所, 准教授 (00376633) ; 渡邊 賢司 国立研究開発法人物質・材料研究機構, 光・電子材料ユニット, 主席研究員 (20343840) ; 寺地 徳之 国立研究開発法人物質・材料研究機構, 光・電子材料ユニット, 主幹研究員 (50332747) ; 大場 史康 東京工業大学, 応用セラミックス研究所, 教授 (90378795) ; 中山 敦子 新潟大学, 学内共同利用施設等, 准教授 (50399383) ; 村田 秀信 国立研究開発法人物質・材料研究機構, その他部局等, 研究員 (30726287)
• Project Period (FY): 2014-04-01 – 2017-03-31
• Keywords: BCN化合物 / ダイヤモンド / 立方晶窒化ホウ素 / 超高圧合成 / 2次元系光・電子材料

Outline of Final Research Achievements

BCxN alloys with 2-dimensional(2D) and 3D crystals structure may exhibit unique properties. Purposes of this study are synthesis of high quality BCxN crystals and realization for their new functions. Doping of Carbon in high quality hBN crystals affects their band-edge nature. Boron and Nitrogen co-doping in diamond also modify its optical natures. High resolution structural characteristics of diamond/cBN hetero-junction exhibit unique features. BCxN crystals with rare x quantity and diamond/cBN bonding nature were studied. In the former study gave requirement for hBN crystals as substrates for 2D devices and the latter gave new concept of device structure in diamond/cBN.

Free Research Field

高圧材料科学