2016 Fiscal Year Final Research Report
Development of ferromagnetic tunnel junctions with a ferroelectric barrier layer and the control of their spin-transport by electric field effects
| Project/Area Number |
26249037
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Tohoku University |
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Principal Investigator |
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| Co-Investigator(Kenkyū-buntansha) |
末益 崇 筑波大学, 数理物質科学研究科(系), 教授 (40282339)
白井 正文 東北大学, 電気通信研究所, 教授 (70221306)
古門 聡士 静岡大学, 工学研究科, 准教授 (50377719)
磯上 慎二 福島工業高等専門学校, 一般教科(物理科), 准教授 (10586853)
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| Project Period (FY) |
2014-04-01 – 2017-03-31
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| Keywords | スピントロニクス / 磁性材料 / 磁気抵抗効果 / スピン分極 / 電界効果 |
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| Outline of Final Research Achievements |
This study is aimed to control the spin-transport in Fe4N-based ferromagnetic tunnel junctions through the electric field effect by spontaneous polarization of a ferroelectric tunnel barrier. Various kinds of anti-perovskite-type transition-metal nitride thin films were successfully synthesized and their magnetic and magneto-transport properties were examined. The spin-polarized transport theory was newly constructed taking into account the spin-orbit interaction and crystal field effects, and successfully evaluated the spin-polarization of conduction electrons in ferromagnets with its sign through the anisotropic magnetoresistance effects. Epitaxial growth technique of thin films was developed for complex oxides as perovskite-type ferroelectrics. Electric field effects of ferromagnetic tunnel junctions with a ferroelectric barrier layer were investigated by the first-principles calculation.
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| Free Research Field |
磁性薄膜工学
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