Fabrication of NeoSilicon quantum information processing devices based on position control of silicon nano-dots and nanowires

2016 Fiscal Year Final Research Report

• Project/Area Number: 26249048
• Research Category: Grant-in-Aid for Scientific Research (A)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Electron device/Electronic equipment
• Research Institution: Tokyo Institute of Technology
• Principal Investigator: Oda Shunri 東京工業大学, 科学技術創成研究院, 教授 (50126314)
• Co-Investigator(Kenkyū-buntansha): 小寺 哲夫 東京工業大学, 理工学研究科, 准教授 (00466856) ; 河野 行雄 東京工業大学, 量子ナノエレクトロニクス研究センター, 准教授 (90334250) ; 川那子 高暢 東京工業大学, 量子ナノエレクトロニクス研究センター, 助教 (30726633)
• Research Collaborator: MILNE W. I. ケンブリッジ大学, 工学部, 教授 ; Williams D 日立ケンブリッジ研究所, 所長
• Project Period (FY): 2014-06-27 – 2017-03-31
• Keywords: シリコン量子ドット / ナノ結晶シリコン / コアシェルナノワイヤ / 熱電素子 / 量子ビット / スピンブロッケード / 3重量子ドット / 界面欠陥のコヒーレント制御

Outline of Final Research Achievements

Size-control and position-control of silicon nanocrystals have been studied. A single nanocrystals have been located between 9 nm gap electrode and unique characteristics of Coulomb blockade were observed. Fabrication of Ge/Si core/shell nanowires have been optimized. Electrical measurements have revealed that this system is promising for high performance thermoelectric generation due to quantum effects. Coupled quantum dots integrated with a charge-sensor single-electron-transistor have been fabricated by electron beam lithography. A few electron regime and Paul spin blockade have been observed in double quantum dots and triple quantum dots structures as well as in p-type devices. This result is promising for future large scale integrated quantum bits application.

Free Research Field

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