Photoemission study of graphene related materials using synchrotron radiation and laser

2016 Fiscal Year Final Research Report

• Project/Area Number: 26286008
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Partial Multi-year Fund
• Section: 一般
• Research Field: Nanostructural physics
• Research Institution: Saga University
• Principal Investigator: Takahashi Kazutoshi 佐賀大学, シンクロトロン光応用研究センター, 准教授 (30332183)
• Co-Investigator(Kenkyū-buntansha): 今村 真幸 佐賀大学, シンクロトロン光応用研究センター, 助教 (40554358) ; 東 純平 佐賀大学, シンクロトロン光応用研究センター, 准教授 (40372768) ; 山本 勇 佐賀大学, シンクロトロン光応用研究センター, 助教 (80528993)
• Project Period (FY): 2014-04-01 – 2017-03-31
• Keywords: グラフェン / 光電子分光 / 放射光 / レーザー

Outline of Final Research Achievements

Photoemission measurements using the characteristic features of synchrotron radiation and laser have been performed to study the occupied and un-occupied electronic structure of graphene-related materials. Band dispersion with odd and even symmetry to the graphene layer have been determined for epitaxial graphene with the thickness of 1, 2 and 3 layers. Temporal electron population in pi* state of these graphene has been measured using time-resolved two-photon photoemission measurements. Oxygen intercalation causes p-type Dirac bands, strongly bounded image potential states and pi* state with longer lifetime. Bi(110) ultra-thin film with six in-plane domains have been grown on graphene and band dispersion alongΓX1 and ΓX2.have been determined.

Free Research Field

総合理工