Study of substrates for h-BN single crystal growth by chemical vapor deposition method

2016 Fiscal Year Final Research Report

• Project/Area Number: 26286025
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Partial Multi-year Fund
• Section: 一般
• Research Field: Nanomaterials engineering
• Research Institution: National Institute for Materials Science
• Principal Investigator: WATANABE Kenji 国立研究開発法人物質・材料研究機構, 機能性材料研究拠点, 主席研究員 (20343840)
• Co-Investigator(Renkei-kenkyūsha): TANIGUCHI Takashi 国立研究開発法人物質・材料研究機構, 機能性材料研究拠点・超高圧グループ, グループリーダー (80354413)
• Project Period (FY): 2014-04-01 – 2017-03-31
• Keywords: 六方晶窒化ホウ素 / 原子層科学 / 結晶成長 / 気相成長 / 格子欠陥 / 電子デバイス

Outline of Final Research Achievements

In this study, we have examined the various kind of substrates for the single crystal growth of hexagonal boron nitride (h-BN) by employing the chemical vapor deposition (CVD) method.Among various kind of substrates, h-BN substrates successfully gave high quality h-BN thin films, which showed similar or higher crystallinity than the one for the crystals grown by high temperature-high pressure (HT-HP) technique. These homoepitaxial films were examined by confocal Raman depth mapping and UV-photoluminescence microscope. The depth profiles of the width of the Raman mode showed the significant decrease and the exciton luminescence near the band edge showed a single narrower band. These results imply the decrease of defects of the epitaxial h-BN layers.

Free Research Field

結晶工学