2016 Fiscal Year Final Research Report
Investigation for inceasement of magnetoresistance through semiconductore chanel
| Project/Area Number |
26286036
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Partial Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Applied materials
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| Research Institution | Tohoku University |
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Principal Investigator |
Tezuka Nobuki 東北大学, 工学(系)研究科(研究院), 准教授 (40323076)
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| Co-Investigator(Kenkyū-buntansha) |
斉藤 好昭 株式会社東芝研究開発センター, 研究開発センター, 研究主幹 (80393859)
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| Project Period (FY) |
2014-04-01 – 2017-03-31
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| Keywords | スピントロニクス / スピン注入 / 磁気抵抗効果 / 半導体 / スピントランジスタ |
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| Outline of Final Research Achievements |
The relationship between gap length and spin signal in Si/MgO/ferromagent devices was investigated. It was found that the amount of re-deposition metal in microfabrication process reduced by the optimaization of milling process. For the devices with Co2FeSi Heusler material electrode, spin injection efficiency of about 40% by four termianl Hanle method, and magnetoresistance ratio of about 1% by two terminal method were obtained at room temperature.
The tunnnel magnetoresistance was investigated for magnetic tunnel junctions on Si with MgO tunnel barrier and antiferromagnetic coupling layer using CoFeB and W. The resistivity of about 10 μm2 and magnetoresistance ratio of about 250% were obtained.
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| Free Research Field |
スピントロニクス
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