Elucidation of mechanism for low contact resistance in organic transistors and development of high speed device

2016 Fiscal Year Final Research Report

• Project/Area Number: 26286037
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Partial Multi-year Fund
• Section: 一般
• Research Field: Applied materials
• Research Institution: Osaka University
• Principal Investigator: UEMURA TAKAFUMI 大阪大学, 産業科学研究所, 准教授 (30448097)
• Co-Investigator(Kenkyū-buntansha): 竹谷 純一 東京大学, 新領域創成科学研究科, 教授 (20371289) ; 岡本 敏宏 東京大学, 新領域創成科学研究科, 准教授 (80469931)
• Project Period (FY): 2014-04-01 – 2017-03-31
• Keywords: 接触抵抗

Outline of Final Research Achievements

In this research, we developed a high-speed operation device with organic field-effect transistors (FETs). As a result, in the Au top contact organic FETs, we clarified that an annealing process dramatically reduces the contact resistance. Also, we clarified that the cause of the mobility overestimation of the organic FET is due to the large contact resistance. Moreover, by optimizing process conditions, we realized the world's smallest contact resistance (50 ohm・cm). Finally, we succeeded in fabricating a low voltage operating flexible organic FET circuit.

Free Research Field

有機トランジスタ