Broad peak in resistivity-temperature curve of manganese nitrides: Elucidation of peculiar conduction mechanism and development to standard-resister materials

2016 Fiscal Year Final Research Report

• Project/Area Number: 26286038
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Partial Multi-year Fund
• Section: 一般
• Research Field: Applied materials
• Research Institution: Nagoya University
• Principal Investigator: TAKENAKA Koshi 名古屋大学, 工学(系)研究科(研究院), 教授 (60283454)
• Co-Investigator(Kenkyū-buntansha): 生田 博志 名古屋大学, 工学(系)研究科(研究院), 教授 (30231129) ; 金子 晋久 国立研究開発法人産業技術総合研究所, 計量標準総合センター, 研究グループ長 (30371032)
• Co-Investigator(Renkei-kenkyūsha): KANEKO Nobuhisa 産業技術総合研究所, 計量標準総合センター, 研究グループ長 (30371032)
• Project Period (FY): 2014-04-01 – 2017-03-31
• Keywords: 新機能材料 / 抵抗標準 / 薄膜 / 逆ペロフスカイト

Outline of Final Research Achievements

We achieved the extremely low second-order temperature coefficient of resistance, -0.20 ppm/K2, with the peak temperature of 307 K by co-doping of Cu, Mn and In to Mn3AgN, which is comparable to widely-used standard-resister material, manganin. The drift rate of resistance was suppressed to less than several ppm/year by optimizing the methods of contact formation. We also successfully fabricated an epitaxial film of prototypical material Mn3CuN using a high-magnetic-field sputter method.

Free Research Field

固体物理学