Study on ferroelectric resistive switching in ferroelectric tunnel junctions and ferroelectric diodes

2016 Fiscal Year Final Research Report

• Project/Area Number: 26286055
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Partial Multi-year Fund
• Section: 一般
• Research Field: Thin film/Surface and interfacial physical properties
• Research Institution: National Institute of Advanced Industrial Science and Technology
• Principal Investigator: Sawa Akihito 国立研究開発法人産業技術総合研究所, 電子光技術研究部門, 副研究部門長 (10357171)
• Co-Investigator(Renkei-kenkyūsha): YAMADA Hiroyuki 国立研究開発法人産業技術総合研究所, 電子光技術研究部門, 主任研究員 (00415762)
• Project Period (FY): 2014-04-01 – 2017-03-31
• Keywords: 表面・界面物性 / 電子・電気材料 / 酸化物エレクトロニクス

Outline of Final Research Achievements

From the I-V characteristics and cell-area dependence of the resistive switching properties in Co/BaTiO3/(La,Sr)MnO3 (Co/BTO/LSMO) ferroelectric tunnel junctions (FTJs), we found that the thermionic emission is the dominant transport process in the FTJs and the resistive switching occurs over the entire interface. We also found that the surface termination of the ferroelectric barrier BTO in contact with a metal electrode critically affects the resistive switching properties. These results are explained in terms of the termination dependence of the depolarization field, i.e., the asymmetric potential distribution in FTJ, that is generated by a dead layer and imperfect charge screening at the interfaces.

Free Research Field

応用物理学，薄膜・表面界面物性