Fabrication of epitaxial Ferrite thin films on Si substrates and their application to spintronic devices

2016 Fiscal Year Final Research Report

• Project/Area Number: 26289086
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Partial Multi-year Fund
• Section: 一般
• Research Field: Electronic materials/Electric materials
• Research Institution: The University of Tokyo
• Principal Investigator: Nakane Ryosho 東京大学, 工学(系)研究科(研究院), 准教授 (50422332)
• Project Period (FY): 2014-04-01 – 2017-03-31
• Keywords: 電子材料 / 結晶成長 / 磁性材料 / 電子デバイス

Outline of Final Research Achievements

The purposes of this study are 1) to fabricate Ni- and Co-ferrite thin films on Si substrates, which can be applied to Si-based spin metal-oxide field-effect transistors, and 2) to clarify the relation between their structures and magnetism, particularly very thin film thickness enough for electron tunneling.
We established a technique to fabricate Ni-ferrite thin films on Si(111) structures, which do not have a interfacial SiOx layer and have a good magnetic properties. We also revealed that the relation between the crystalline properties and magnetism of Co-ferrite films with various thicknesses, by analyzing X-ray magnetic dichroism signals with an established analysis method.

Free Research Field

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