Development of basic technology for Ge-CMOS integratable high-performance Ge optical devices

2016 Fiscal Year Final Research Report

• Project/Area Number: 26289090
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Partial Multi-year Fund
• Section: 一般
• Research Field: Electronic materials/Electric materials
• Research Institution: Kyushu University
• Principal Investigator: Wang Dong 九州大学, 総合理工学研究科(研究院), 准教授 (10419616)
• Co-Investigator(Kenkyū-buntansha): 中島 寛 九州大学, 産学連携センター, 教授 (70172301)
• Co-Investigator(Renkei-kenkyūsha): HAMAMOTO Kiichi 九州大学, 総合理工学研究科, 教授 (70404027) ; YAMAMOTO Keisuke 九州大学, 総合理工学研究科, 助教 (20706387)
• Project Period (FY): 2014-04-01 – 2017-03-31
• Keywords: Ge光素子 / 金属/半導体コンタクト / Siフォトニクス / CMOS / 電子・電気材料

Outline of Final Research Achievements

Direct-band-gap electroluminescence (EL) spectra was clearly observed by using asymmetric lateral metal/Ge/metal structure, which enables a highly-efficient injection of minority carriers. The main target of this research was obtained by employing a PtGe/Ge contact with extremely low barrier height for holes, and a SiO2/GeO2 bilayer passivation. As the result, EL efficiency was enhanced by 10 times and the dark current density was decreased by 1 order. An on/off ratio of 10,000 and a responsivity of 0.7 A/W were also achieved, which is superior to the research target of 0.4 A/W. The electron density of Ge substrates was successfully controlled in a wide region by Sb doping. By using a highly-doped n-type Ge substrate, the EL efficiency was furtherly enhanced by 3 times.

Free Research Field

工学