Control of electronic structure by anisotropic strain in semiconducting silicide

2016 Fiscal Year Final Research Report

• Project/Area Number: 26289093
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Partial Multi-year Fund
• Section: 一般
• Research Field: Electronic materials/Electric materials
• Research Institution: Kyushu Institute of Technology
• Principal Investigator: TERAI Yoshikazu 九州工業大学, 大学院情報工学研究院, 教授 (90360049)
• Project Period (FY): 2014-04-01 – 2017-03-31
• Keywords: シリサイド半導体 / 鉄シリサイド / バンド構造制御 / ひずみ導入

Outline of Final Research Achievements

The purpose of this study is to control the band structure of semiconducting iron silicide by introducing anisotropic strain. The evaluation technology of strain, the strain relaxation mechanism, the epitaxial growth of iron silicide on strain relaxed SiGe, and photoluminescence(PL) lifetime were investigated. evaluated. As a result, a strain evaluation technique by polarized Raman spectroscopy was established. The strain relaxation due to Si defects was confirmed. The epitaxial growth of iron silicide on strain relaxed SiGe was succeeded for the first time. In the investigation of photoluminescence lifetime, the intrinsic PL lifetime due to the band-to-band transition of iron silicide was obtained.

Free Research Field

半導体光物性