Arrayed Cascode Linear Doherty Amplifier

2016 Fiscal Year Final Research Report

• Project/Area Number: 26289100
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Partial Multi-year Fund
• Section: 一般
• Research Field: Electron device/Electronic equipment
• Research Institution: The University of Electro-Communications
• Principal Investigator: Honjo Kazuhiko 電気通信大学, 情報理工学(系)研究科, 教授 (90334573)
• Project Period (FY): 2014-04-01 – 2017-03-31
• Keywords: マイクロ波 / ミリ波 / 電力増幅器 / 線形性 / 高効率

Outline of Final Research Achievements

In order to realize an arrayed cascode linear Doherty amplifier, we designed and fabricated an independent bias type InGaP / GaAs HBT three-stage cascode MMIC and AlGaN / GaN HEMT three-stage cascode MMIC as a basic cell structure. In HBTMMIC, the power gain was improved by more than 10 dB, the isolation was improved by more than 23 dB, and it was confirmed experimentally that the power efficiency characteristic and the distortion characteristic can be optimized and adjusted independently as compared with the nonindependent bias type. The same effect was confirmed with HEMT MMIC. We constructed Doherty amplifiers using two such cells, and the improvement of the power added efficiency was confirmed by simulation in the area of output backoff of 5 dB or more, and the effectiveness of this method was shown.

Free Research Field

マイクロ波工学