High performance GMR sensors using spin-control by anti-ferromagnetic NiO layer

2016 Fiscal Year Final Research Report

• Project/Area Number: 26289102
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Partial Multi-year Fund
• Section: 一般
• Research Field: Electron device/Electronic equipment
• Research Institution: Nagoya University
• Principal Investigator: Iwata Satoshi 名古屋大学, 未来材料・システム研究所, 教授 (60151742)
• Co-Investigator(Kenkyū-buntansha): 加藤 剛志 名古屋大学, 工学(系)研究科(研究院), 准教授 (50303665) ; 大島 大輝 名古屋大学, 未来材料・システム研究所, 助教 (60736528)
• Project Period (FY): 2014-04-01 – 2017-03-31
• Keywords: NiO反強磁性層 / 歪みセンサ / 巨大磁気抵抗効果 / スピンバルブ膜 / 一方向異方性 / 触覚センサ

Outline of Final Research Achievements

Giant Magnetoresistance (GMR) films with a magnetic free layer of NiO sandwiched tri-layer was developed and its application to magnetic sensors was investigated. It is found that an exchange coupled CoFe/NiO/CoFeB tri-layers were obtained by using NiO thickness with 3 nm. A spin valve film with this tri-layer as magnetic free layer shows the magnetoresistance effect with 1.5% MR-ratio.
A spin valve film with a magnetic free layer of FeSiB/FeCoB was deposited on a cover glass and was applied to strain sensors. Output signals was increased with changing the strain from tensile strain to compressive strain.

Free Research Field

スピンエレクトロニクス