Development of plasmonic integrated circuits

2017 Fiscal Year Final Research Report

• Project/Area Number: 26289103
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Partial Multi-year Fund
• Section: 一般
• Research Field: Electron device/Electronic equipment
• Research Institution: Toyohashi University of Technology
• Principal Investigator: Fukuda Mitsuo 豊橋技術科学大学, 工学(系)研究科(研究院), 教授 (50378262)
• Co-Investigator(Kenkyū-buntansha): 石井 佑弥 豊橋技術科学大学, 工学(系)研究科(研究院), 助教 (30633440) ; 石山 武 豊橋技術科学大学, 工学(系)研究科(研究院), 准教授 (40314653)
• Project Period (FY): 2014-04-01 – 2018-03-31
• Keywords: 表面プラズモン / 光・電子集積回路 / 光回路 / 光デバイス / 近接場光

Outline of Final Research Achievements

Key components and techniques have been developed to construct plasmonic integrated circuits consisting of surface plasmon and electron devices on a silicon substrate. A metal waveguide having a trench structure was developed to obtain electrical isolation without any interruption of surface plasmon propagation. A metal waveguide with　multiple slits was also developed to control the propagation direction of surface plasmon by changing the slit pitch. These waveguides were connected to the gate electrode of a MOSFET, and the multiple-signal or beat-signal operations of the MOSFET were experimentally confirmed. In addition, a half adder consisting of multiple single- and multi-mode waveguides was designed, and the performances were experimentally confirmed. These waveguides and components will be key factors for high-speed plasmonic integrated circuits merged with electronic components.

Free Research Field

フォトニクス