2016 Fiscal Year Final Research Report
p-type conductivity control in ZnMgSTe alloy semiconductors by adjusting the valence-band-edge energy
| Project/Area Number |
26390053
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Crystal engineering
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| Research Institution | Tottori University |
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Principal Investigator |
Ichino Kunio 鳥取大学, 工学(系)研究科(研究院), 教授 (90263483)
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| Research Collaborator |
KASHIYAMA Shota
NANBA Nao
HASEGAWA Hiroyasu
KADOTA Masahiro
SAHASHI Kyoma
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| Project Period (FY) |
2014-04-01 – 2017-03-31
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| Keywords | ZnMgSTe / ZnS / p-type / valence band / wide bandgap |
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| Outline of Final Research Achievements |
We had previously achieved p-type conduction in wide-bandgap ZnS-based alloy, ZnSTe:N. On the basis of this achievement, we aimed at both wide bandgap and p-type conduction in Mg-added ZnMgSTe:N quaternary alloys, and have confirmed the validity of the idea. Specifically, we first improved the crystal quality of ZnSTe alloys. Although the growth of ZnMgSTe quaternary alloys had rarely been reported, we grew high quality ZnMgSTe quaternary alloys by adding Mg to the ZnSTe growth process. By characterizing the ZnMgSTe alloys, the bandgap was found to increase by increasing Mg content. Furthermore, by doping with N acceptors, the ZnMgSTe showed p-type conduction.
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| Free Research Field |
総合理工
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