Generation and migration of plasma-induced defects in III-nitride semiconductors

2016 Fiscal Year Final Research Report

• Project/Area Number: 26390056
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Crystal engineering
• Research Institution: Tokyo Metropolitan University
• Principal Investigator: NAKAMURA Seiji 首都大学東京, 理工学研究科, 准教授 (70336519)
• Project Period (FY): 2014-04-01 – 2017-03-31
• Keywords: プラズマ照射誘起欠陥 / III族窒化物半導体 / バイアスアニール / プラズマダメージ

Outline of Final Research Achievements

In this study, we have focused on the effect of the charge state of the plasma-induced defects responsible for the dopant deactivation in III-nitride semiconductors. Anneal experiments of the plasma-damaged GaN Schottky diodes were carried out in order to clarify the effects of bias voltage as well as the photoirradiation on the reactivation of the passivated dopants. We revealed that the charge state of the plasma-induced defect plays an important role in the reactivation of the passivated dopants as well as the migration.

Free Research Field

半導体結晶工学