Study on the Behavior of Defects in Dilute Nitride Semiconductors and Improvement of Device Reliability

2016 Fiscal Year Final Research Report

• Project/Area Number: 26390057
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Crystal engineering
• Research Institution: Kanazawa Institute of Technology
• Principal Investigator: Ueda Osamu 金沢工業大学, 工学研究科, 教授 (50418076)
• Co-Investigator(Renkei-kenkyūsha): IKENAGA NORIAKI 金沢工業大学, 工学部, 准教授 (30512371) ; YAGI SHUHEI 埼玉大学, 理工学研究科, 准教授 (30421415)
• Project Period (FY): 2014-04-01 – 2017-03-31
• Keywords: 希釈窒化物半導体 / 欠陥 / 光照射 / 劣化 / 点欠陥 / 転位 / 電子顕微鏡 / フォトルミネッセンス

Outline of Final Research Achievements

In order to clarify degradation mechanism of optical devices fabricated from dilute nitride semiconductors such as GaInNAs, grown-in defects were characterized by transmission electron microscopy, and generation and multiplication of defects in the crystals under laser irradiation were investigated.
It has been shown that defects such as point defect clusters and dislocation loops are not generated in as-grown GaInNAs crystals. Furthermore, in the case of laser irradiation of GaInNAs/GaAs SQW structure, we have found that the emission efficiency increased for lower laser power density and that the emission efficiency drastically increased then decreased for higher power density. In both cases, no structural defects were newly generated by the laser irradiation. Further increase in the laser power density is required for detailed investigation of the degradation mechanism.

Free Research Field

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